Dynamical simulation of molecular-beam epitaxial growth of a model crystal
- 15 January 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 39 (2) , 1224-1228
- https://doi.org/10.1103/physrevb.39.1224
Abstract
Molecular-dynamics simulation is used to study molecular-beam epitaxial growth of a model fcc system where the atoms interact via the Lennard-Jones (LJ) potential. Dependence of the growth profile on the substrate temperature, the rate of the incident atomic flux, annealing, and on the orientation of the crystal surface is examined. Roles of various kinetic processes in epitaxial growth properties are discussed. We find that for a LJ system the best epitaxial growth occurs at low to intermediate temperatures along the [111] and [100] directions.This publication has 18 references indexed in Scilit:
- Direct calculation of interfacial energetics: Roles of axial commensuration and strain in epitaxial growthPhysical Review B, 1987
- A molecular statics and dynamics study of epitaxial growth frontsSurface Science, 1986
- Kinetics and energetics studies at surfaces and interfacesJournal of Vacuum Science & Technology B, 1986
- Dynamical properties of long-wavelength interface fluctuations during nucleation-dominated crystal growthPhysical Review B, 1986
- Role of Relaxation in Epitaxial Growth: A Molecular-Dynamics StudyPhysical Review Letters, 1985
- Epitaxy and superlattice growthPhysical Review B, 1984
- Interaction kinetics of As2 and Ga on {100} GaAs surfacesSurface Science, 1977
- Interaction kinetics of As4 and Ga on {100} GaAs surfaces using a modulated molecular beam techniqueSurface Science, 1975
- Surface stoichiometry and structure of GaAsSurface Science, 1974
- Rate equation approaches to thin film nucleation kineticsPhilosophical Magazine, 1973