Low frequency noise studies of AlAs — GaAs — AlAs quantum well diodes at 77 K
- 1 December 1990
- journal article
- Published by Elsevier in Cryogenics
- Vol. 30 (12) , 1140-1145
- https://doi.org/10.1016/0011-2275(90)90222-x
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Experimental study of microwave reflection gain of AlAs/GaAs/AlAs quantum well structuresElectronics Letters, 1990
- Analysis of defect-assisted tunneling based on low frequency noise measurements of resonant tunnel diodesSolid-State Electronics, 1989
- Low-frequency noise measurements on AlGaAs/GaAs resonant tunnel diodesApplied Physics Letters, 1989
- Quantum functional devices: resonant-tunneling transistors, circuits with reduced complexity, and multiple valued logicIEEE Transactions on Electron Devices, 1989
- Fundamental oscillations up to 200 GHz in resonant tunneling diodes and new estimates of their maximum oscillation frequency from stationary-state tunneling theoryJournal of Applied Physics, 1988
- Picosecond switching time measurement of a resonant tunneling diodeApplied Physics Letters, 1988
- Quantum capacitance devicesApplied Physics Letters, 1988
- Observation of millimeter-wave oscillations from resonant tunneling diodes and some theoretical considerations of ultimate frequency limitsApplied Physics Letters, 1987
- Resonant tunneling through double barriers, perpendicular quantum transport phenomena in superlattices, and their device applicationsIEEE Journal of Quantum Electronics, 1986
- Quantum well oscillatorsApplied Physics Letters, 1984