Reduction of interface states in Pt-GaAs buried Schottky barrier
- 1 January 1984
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (1) , 80-81
- https://doi.org/10.1063/1.94560
Abstract
The interface states of Pt-GaAs Schottky barrier were investigated by deep level transition spectroscopy. The concentrations of ∼0.46 eV deep electron trap located near the Schottky barrier interface were reduced by sintering Pt-GaAs. The interface of the buried Pt-GaAs Schottky barrier was improved by the Pt-GaAs reaction.Keywords
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