Optimization of InP / Si heteroepitaxial growth conditions using organometallic vapor phase epitaxy
- 1 June 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 96 (2) , 369-377
- https://doi.org/10.1016/0022-0248(89)90535-6
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- GaAs heteroepitaxial growth on Si for solar cellsApplied Physics Letters, 1988
- Growth of antiphase-domain-free GaP on Si by organometallic vapor phase epitaxyJournal of Crystal Growth, 1988
- MOCVD Growth of InP on 4-inch Si Substrate with GaAs Intermediate LayerJapanese Journal of Applied Physics, 1987
- Heteroepitaxial growth of InP directly on Si by low pressure metalorganic chemical vapor depositionApplied Physics Letters, 1987
- A new approach for thin film InP solar cellsSolar Cells, 1986
- Detection of Structural Defects in N‐type InP Crystals by Electrochemical Etching under IlluminationJournal of the Electrochemical Society, 1981