DOUBLE INJECTION IN Au-DOPED Si p-π-n DIODES
- 15 January 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 16 (2) , 63-66
- https://doi.org/10.1063/1.1653101
Abstract
Calculations of the J‐V characteristics of Au‐doped Si p‐π‐n devices are presented, using a computer‐aided solution of the general conduction and recombination equations. The three charge states of the Au impurity are included in the computations. The predicted characteristics for a Au density of 5×1016 cm−3 exhibit good agreement with experiment. The calculations reveal the spatial distributions of carriers and space charge within the π region for various injection levels.Keywords
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