Double-gated Spindt emitters with stacked focusing electrode
- 1 January 2002
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 20 (1) , 53-59
- https://doi.org/10.1116/1.1428278
Abstract
Arrays of molybdenum field emission cones with integrated focusing electrode (IFE-FEA) were studied as a potential device structure for field emission displays (FEDs) that achieve high brightness, high luminous efficiency, and longer lifetime, without loss of resolution. Device operation and optimization were examined both qualitatively and analytically. Double-gated devices were fabricated using the Spindt cone process. Extensive electrical characterization of IFE-FEAs was conducted. Preliminary optical measurements demonstrated the desired focusing effect.Keywords
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