Technological aspects of epitaxial CoSi2 layers for CMOS
- 1 November 1993
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 73, 19-24
- https://doi.org/10.1016/0169-4332(93)90141-w
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Formation of epitaxial CoSi2 on Si(100): Role of the annealing ambientApplied Physics Letters, 1993
- In situ emissivity measurements to probe the phase transformations during rapid thermal processing Co silicidationApplied Physics Letters, 1992
- Nanoscale CoSi2 contact layer growth from deposited Co/Ti multilayers on Si substratesApplied Physics Letters, 1992
- Resistance and structural stabilities of epitaxial CoSi2 films on (001) Si substratesJournal of Applied Physics, 1992
- Control of lateral overgrowth of TiSi2 and CoSi2 films in VLSI circuitsApplied Surface Science, 1991
- Growth of epitaxial CoSi2 on (100)SiApplied Physics Letters, 1991
- A study of the leakage mechanisms of silicided n+/p junctionsJournal of Applied Physics, 1988
- A self-aligned cobalt silicide technology using rapid thermal processingJournal of Vacuum Science & Technology B, 1986