In situ emissivity measurements to probe the phase transformations during rapid thermal processing Co silicidation

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Abstract
Phase transformations during RTP Co silicidation on both crystalline and polycrystalline silicon have been monitored for the first time by in situ emissivity measurements at a wavelength of 2.4 μm. The method can be used to accurately control the silicidation process and the final silicide phase. It is demonstrated that factors influencing silicidation, such as background doping level and the degree of crystallinity of the substrate can be determined. Ex situ emissivity measurements as a function of wavelength show that an analyzing wavelength of 10 μm can be applied to further improve the probing sensitivity for all silicide phase transformations.