Surface structure control of GaAs (111)A vicinal substrates by metal-organic vapor-phase epitaxy
- 1 January 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 183 (1-2) , 43-48
- https://doi.org/10.1016/s0022-0248(97)00393-x
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Multiatomic step formation with excellent uniformity on vicinal (1 1 1)A GaAs surfaces by metalorganic vapor-phase epitaxyJournal of Crystal Growth, 1997
- Atomic layer epitaxy of GaAs and GaAsxP1 − x on nominally oriented GaAs(111) substrates with high quality surface and interfacesJournal of Crystal Growth, 1996
- Step bunching on {111} facets in the selective growth of GaAs by metalorganic vapor phase epitaxyJournal of Applied Physics, 1995
- Crystallographic selective growth of GaAs by atomic layer epitaxyApplied Physics Letters, 1993
- Surface reconstructions of GaAs(111)A and (111)B: A static surface phase study by reflection high-energy electron diffractionApplied Physics Letters, 1993
- Low-energy electron-microscopy investigations of orientational phase separation on vicinal Si(111) surfacesPhysical Review Letters, 1991
- Quantization of terrace widths on vicinal Si(111)Journal of Vacuum Science & Technology A, 1991
- Growth process of III–V compound semiconductors by migration-enhanced epitaxyJournal of Crystal Growth, 1990
- Direct observation of the phase transition between the (7 × 7) and (1 × 1) structures of clean (111) silicon surfacesSurface Science, 1981