Fracture properties of GaAs–AlAs superlattices studied by atomic force microscopy and scanning electron microscopy
- 1 January 1998
- journal article
- Published by Elsevier in Acta Materialia
- Vol. 46 (2) , 579-584
- https://doi.org/10.1016/s1359-6454(97)00242-5
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Friction force microscopy characterization of semiconductor heterostructuresMaterials Science and Engineering: B, 1996
- On the resolution of semiconductor multilayers with a scanning electron microscopeUltramicroscopy, 1995
- In Situ Investigation of Aluminum Gallium Arsenide/Gallium Arsenide Multilayer Structures under Inert and Reactive Media by Atomic Force MicroscopyAnalytical Chemistry, 1995
- Field-emission SEM imaging of compositional and doping layer semiconductor superlatticesUltramicroscopy, 1995
- Atomic and electronic Z-contrast effects in high-resolution imagingUltramicroscopy, 1994
- Cross-sectional scanning tunneling microscopy of doped and undoped AlGaAs/GaAs heterostructuresApplied Physics Letters, 1994
- Investigation of aluminum gallium arsenide/gallium arsenide superlattices by atomic force microscopyAnalytical Chemistry, 1992
- Oxidation effects on cleaved multiple quantum well surfaces in air observed by scanning probe microscopyApplied Physics Letters, 1992
- Determination of tilted superlattice structure by atomic force microscopyApplied Physics Letters, 1989
- Scanning Tunneling Microscopy of Ga0.47In0.53As/InP Multiquantum Well Structures in AirJapanese Journal of Applied Physics, 1989