New results on a two-dimensional electron gas in a tilted magnetic field
- 15 May 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 31 (10) , 6807-6808
- https://doi.org/10.1103/physrevb.31.6807
Abstract
It is found that phase shifts in the conductance oscillations of a two-dimensional (2D) electron gas in a tilted magnetic field may result from the correction to the electron energy levels due to the parallel component of the magnetic field. Such phase shifts are observed in a GaAs/ As heterojunction. From the size of the shifts, one can calculate the standard deviation in the position of the electron, normal to the 2D plane. The effective width of the electronic wave function determined in this way is 70 Å.
Keywords
This publication has 9 references indexed in Scilit:
- Electron energy levels in GaAs-heterojunctionsPhysical Review B, 1984
- An experimental determination of enhanced electron g-factors in GaInAs-A1InAs heterojunctionsSolid State Communications, 1983
- A study of intersubband scattering in GaAs/AlxGa1−xAs heterostructures by means of a parallel magnetic fieldSolid State Communications, 1983
- Two-dimensional space-charge layer in a tilted magnetic fieldPhysical Review B, 1982
- On the Electronic g‐Faetor in n‐Type Silicon Inversion LayersPhysica Status Solidi (b), 1980
- Magnetic field dependence of the valley splitting in n-type inverted silicon mosfet surfacesSolid State Communications, 1978
- Effect of a parallel magnetic field on surface quantizationSolid State Communications, 1971
- Effects of a Tilted Magnetic Field on a Two-Dimensional Electron GasPhysical Review B, 1968
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967