Development of a GaAs avalanche electron-emitting diode cold-electron emitter
- 1 November 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (11) , 2715-2719
- https://doi.org/10.1109/16.43778
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Monte Carlo simulation of Si and GaAs avalanche electron emitting diodesJournal of Applied Physics, 1989
- Pulse-laser-irradiated high-brightness photoelectron sourceApplied Physics Letters, 1987
- Cesium migration and equilibrium in a strong electric field on the surface of siliconApplied Physics Letters, 1986
- Performance of silicon cold cathodesJournal of Vacuum Science & Technology B, 1986
- Design, technology, and behavior of a silicon avalanche cathodeJournal of Vacuum Science & Technology B, 1986
- Cleaning of Si and GaAs Crystal Surfaces by Ion Bombardment in the 50–1500 eV Range: Influence of Bombarding Energy and Sample Temperature on Damage and IncorporationJournal of the Electrochemical Society, 1984
- Electron emission from depletion layers of silicon p-n junctionsJournal of Applied Physics, 1980
- Electron multiplier–scintillator detector for pulse counting positive or negative ionsReview of Scientific Instruments, 1978