Submicron resolution measurement of stress in silicon by near-field Raman spectroscopy
- 23 March 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (12) , 1478-1480
- https://doi.org/10.1063/1.120598
Abstract
A scanning near-field optical microscope (SNOM) has been constructed that is capable of recording Raman spectra with a spatial resolution of The SNOM has been used to produce a combined topological and Raman map of a plastically deformed area of a silicon wafer. The variation of the frequency of the Raman band with position has been used to estimate the residual stresses associated with the deformation. The measurements demonstrate the feasibility of nondestructive, submicron stress measurement in semiconductors by near-field Raman spectroscopy.
Keywords
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