CONCAVE-DMOSFET: A New Super-Low On-Resistance Power MOSFET
- 1 February 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (2S) , 903-908
- https://doi.org/10.1143/jjap.34.903
Abstract
This paper describes a new super-low on-resistance power MOSFET. The new transistor “CONCAVE-DMOSFET” has a concave channel structure fabricated not by trench etching technique, but by a combination of local oxidation of silicon (LOCOS) and diffusion self-alignment using oxide film as a double diffusion mask. The CONCAVE-DMOSFET based on 16 µ m cell design has been fabricated for the first time, and the specific on-resistance of 75 mΩ· mm2 with breakdown voltage of 50 V has been achieved. This specific on-resistance is the lowest ever reported for power MOSFETs of comparable same design rule. The lowest value has been realized by means of the CONCAVE-DMOS technology, which eliminates JFET resistance and provides a damage-free concave surface resulting in high channel mobility of 300 cm2/V·s.Keywords
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