Electronic properties of delta -doped GaAs

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Abstract
For temperature zero the authors study the effects of disorder on the electronic properties of the two-dimensional electron gas which exists in planar-doped ( delta -doped) GaAs. The density of states, the Fermi level, the single-particle relaxation time and the electron mobility are calculated as functions of the dopant concentration. The transition from a band tail to an impurity band and the nature of the metal-insulator transition are discussed. The authors compare the theoretical results on the mobility with some available experimental data.