Schottky barrier height dependence on the compensation doping in the interfacial Si layer of Al/Si/n:GaAs Schottky diodes
- 1 July 1994
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 76 (1) , 371-375
- https://doi.org/10.1063/1.357083
Abstract
Al/Si/n:GaAs Schottky diode structures have been grown by molecular‐beam epitaxy utilizing thin (100 Å) Si interfacial layers. These Si layers are unintentionally very heavily n‐type doped with As from the system or from the substrate. This n‐type doping is intentionally compensated with p‐type (Al) doping during the growth of the Si layer in an attempt to modulate the Schottky barrier height. The resultant barrier height, as determined by I‐V and C‐V measurements, increases with increased acceptor doping in the Si (from 0.34 eV for no Al doping to a maximum of 1.07 eV) as per Poisson’s equation.This publication has 10 references indexed in Scilit:
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