Electron relaxation times due to the deformation-potential interaction of electrons with confined acoustic phonons in a free-standing quantum well
- 15 April 1995
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 51 (15) , 9930-9942
- https://doi.org/10.1103/physrevb.51.9930
Abstract
The confined acoustic phonons in free-standing quantum wells are considered in detail. The Hamiltonian describing interactions of the confined acoustic phonons with electrons in the approximation of the deformation potential and the corresponding electron transition probability density are derived. They are used to analyze the electron scattering times (inverse scattering rate, momentum relaxation time, and the energy relaxation time) in the test-particle approximation as well as in the kinetic approximation. It is shown that the first dilatational mode makes the main contribution to electron scattering in the lowest electron subband. The contribution of the zeroth mode and the second mode are also essential while the modes of higher order are insignificant. Our analysis is performed for both nondegenerate and degenerate electron gases. It is shown that electron scattering by confined acoustic phonons interacting through the deformation potential is substantially suppressed up to the electron energies corresponding to the energy of the first dilatational mode.Keywords
This publication has 34 references indexed in Scilit:
- MOCVD growth and ultrafast photoluminescence in GaAs and InAs freestanding quantum whiskers—a reviewMicrowave and Optical Technology Letters, 1994
- Piezoelectric Sensor for Detecting Force Gradients in Atomic Force MicroscopyJapanese Journal of Applied Physics, 1994
- Fabrication of InAs Single-Crystal Free-Standing Wires for the Study of Electron and Thermal TransportJapanese Journal of Applied Physics, 1993
- Reactive Ion Etched II-VI Quantum Dots: Dependence of Etched Profile on Pattern GeometryJapanese Journal of Applied Physics, 1993
- GaAs free-standing quantum-size wiresJournal of Applied Physics, 1993
- Fabrication of free-standing quantum wellsApplied Physics Letters, 1992
- CH4/H2: A universal reactive ion etch for II-VI semiconductors?Applied Physics Letters, 1992
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- Brillouin scattering from unsupported Al filmsPhysical Review B, 1989
- Lamb waves in unsupported thin films: A Brillouin-scattering studyPhysical Review Letters, 1987