Analysis of MOSFET degradation due to hot-electron stress in terms of interface-state and fixed-charge generation
- 1 November 1988
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 31 (11) , 1603-1610
- https://doi.org/10.1016/0038-1101(88)90007-x
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Trapped-electron and generated interface-trap effects in hot-electron-induced MOSFET degradationIEEE Transactions on Electron Devices, 1987
- Two-dimensional modeling of locally damaged short-channel MOSFET's operating in the linear regionIEEE Transactions on Electron Devices, 1987
- Relationship between MOSFET degradation and hot-electron-induced interface-state generationIEEE Electron Device Letters, 1984
- Effects of hot-carrier trapping in n- and p-channel MOSFET'sIEEE Transactions on Electron Devices, 1983