Hole transport in strained Si1−xGex alloys on Si1−yGey substrates
- 15 November 1998
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 84 (10) , 5597-5602
- https://doi.org/10.1063/1.368605
Abstract
Hole transport at 300 K in (001)-strained Si1−xGex alloys grown on unstrained Si1−yGey is theoretically analyzed considering the full band structure and new, accurate mobility experiments. Ohmic in-plane and out-of-plane drift mobilities are computed over the whole range of x and y. Velocity-field characteristics and transient overshoot effects are studied for fields along the 〈100〉 and 〈110〉 directions in technologically relevant configurations with Monte Carlo simulation. Overshoot peaks around 2×107 cm/s are found in strained Si and Ge-rich SiGe for 100 kV/cm and the 〈100〉 direction.This publication has 32 references indexed in Scilit:
- Si/Si 1−x Ge x heterostructures: Electron transport and field-effect transistor operation using Monte Carlo simulationJournal of Applied Physics, 1997
- Design rules for n-type SiGe hetero FETsSolid-State Electronics, 1997
- Full band Monte Carlo investigation of electron transport in strained Si grown on Si1−xGex substratesApplied Physics Letters, 1997
- CMOS scaling into the nanometer regimeProceedings of the IEEE, 1997
- Coulomb scattering in strained-silicon inversion layers on Si1−xGex substratesApplied Physics Letters, 1996
- Identification of a Mobility-Limiting Scattering Mechanism in Modulation-Doped Si/SiGe HeterostructuresPhysical Review Letters, 1994
- Electronic-band parameters in strained alloys on substratesPhysical Review B, 1993
- Electron transport in strained Si layers on Si1−xGex substratesApplied Physics Letters, 1993
- Electron transport properties of a strained Si layer on a relaxed Si1−xGex substrate by Monte Carlo simulationApplied Physics Letters, 1993
- High-transconductance n-type Si/SiGe modulation-doped field-effect transistorsIEEE Electron Device Letters, 1992