Quantum-well-wire growth by molecular-beam epitaxy: A computer simulation study
- 1 October 1989
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 66 (7) , 3415-3417
- https://doi.org/10.1063/1.344095
Abstract
A computer simulation developed for modeling the growth of low-dimensional III-V alloy structures by molecular-beam epitaxy (MBE) is used to assess the potential of MBE as a method for growing high-quality quantum-well wires. The existence of a temperature window for optimum growth quality is demonstrated, with the position and width of the window showing a sensitivity to the beam flux.This publication has 9 references indexed in Scilit:
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