Tin oxide gated metal-insulator-semiconductor switch diode for room-temperature high speed gas sensing applications
- 1 February 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (5) , 490-492
- https://doi.org/10.1063/1.108916
Abstract
This letter shows the turn on–off current-voltage curves of a tin oxide gated metal-insulator-semiconductor switch diode at room temperature in air, ethanol gas, and hydrogen gas ambient, respectively. Also, the gate turn-off capability and turn-off response time of the device under these gas ambients are investigated. The experimental results show that the device has higher sensitivity and higher speed features in sensing these flammable gases than that of other reported devices at room temperature. The causes which lead to the high sensitivity and high speed features of the sensor were studied in detail and are described.Keywords
This publication has 6 references indexed in Scilit:
- Gate turn off capability of insulated gate metal/amorphous Si/crystalline Si (p-n) switching deviceApplied Physics Letters, 1991
- Surface processes in the detection of reducing gases with SnO2-based devicesSensors and Actuators, 1989
- A tin oxide thin film sensor with high ethanol sensitivityThin Solid Films, 1989
- An integrated hydrogen-switching sensor with a Pd-Si tunnel mis structureSensors and Actuators, 1986
- Hydrogen-sensitive silicon tunnel MIS switching diodesIEEE Electron Device Letters, 1983
- Electrical Properties of Tin Oxide Ultrafine Particle FilmsJournal of the Electrochemical Society, 1981