Deposition of tin-doped indium oxide films by a modified reactive magnetron sputtering process
- 1 May 1989
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 172 (1) , 111-121
- https://doi.org/10.1016/0040-6090(89)90122-3
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Transparent conducting zinc oxide and indium–tin oxide films prepared by modified reactive planar magnetron sputteringJournal of Vacuum Science & Technology A, 1983
- Transparent conductive films of In2O3:Sn prepared by the pyrolysis methodThin Solid Films, 1982
- High rate deposition of transparent conducting films by modified reactive planar magnetron sputtering of Cd2Sn alloyJournal of Vacuum Science and Technology, 1981
- Preparation of In2O3 and tin-doped In2O3 films by a novel activated reactive evaporation techniqueThin Solid Films, 1980
- Advances in high rate sputtering with magnetron-plasmatron processing and instrumentationThin Solid Films, 1979
- Effect of O2 pressure during deposition on properties of rf-sputtered Sn-doped In2O3 filmsApplied Physics Letters, 1977
- Kinetics of the Reactive Sputter Deposition of Titanium OxidesJournal of the Electrochemical Society, 1976
- The deposition rate of metallic thin films in the reactive sputtering processThin Solid Films, 1975
- Reactive sputtering of metals in oxidizing atmospheresThin Solid Films, 1973
- Untersuchungen an halbleitenden IndiumoxydschichtenPhysica Status Solidi (b), 1966