In-situ selective-area epitaxy of GaAs using a GaAs oxide layer as a mask
- 2 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4) , 570-573
- https://doi.org/10.1016/0022-0248(91)91041-8
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Analysis of GaAs MOMBE Reactions by Mass SpectrometryJapanese Journal of Applied Physics, 1989
- Electron-Beam-Induced Cl2 Etching of GaAsJapanese Journal of Applied Physics, 1989
- Selective Area Growth of High Quality GaAs by OMCVD Using Native Oxide MasksJournal of the Electrochemical Society, 1987
- Selective epitaxial growth of GaAs by low-pressure MOVPEJournal of Crystal Growth, 1985
- Molecular beam epitaxial growth of GaAs using trimethylgallium as a Ga sourceJournal of Applied Physics, 1984
- GaAs integrated circuits by selected-area molecular beam epitaxyApplied Physics Letters, 1980