Atomic dynamics and defect evolution during oxygen precipitation and oxidation of silicon
- 5 July 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (1) , 115-117
- https://doi.org/10.1063/1.124293
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Enhanced modes of oxygen diffusion in siliconSolid State Communications, 1998
- Core Structure of Thermal Donors in SiliconPhysical Review Letters, 1996
- Coupled-Barrier Diffusion: The Case of Oxygen in SiliconPhysical Review Letters, 1996
- Hydrogen bonding arrangements at Si–SiO2 interfacesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- Native defects and diffusion in amorphous silicon -- a revisitSolid State Communications, 1992
- Oxygen complexes in siliconPhysical Review B, 1991
- Point defects and dopant diffusion in siliconReviews of Modern Physics, 1989
- Cluster Computations Related to Silicon Thermal DonorsMRS Proceedings, 1985
- On the Annihilation of Thermal Donors in Silicon CrystalsPhysica Status Solidi (a), 1984
- Mechanism of the Formation of Donor States in Heat-Treated SiliconPhysical Review B, 1958