Investigation of Implanted Semiconductors by Nuclear Spectroscopie Methods

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Abstract
By help of nuclear spectroscopic methods the microscopic structure of the environments of implanted atoms can be studied. Moessbauer-effect investigations of implanted semiconductors give a dominating substitution of implanted probes and in most cases the observed radiation damage is relatively small. On the other side experiments with perturbed angular correlations (TDPAC) in comparable systems clearly proof that after implantation a high degree of radiation damage exists. Electron channelling investigations support the statements of the Moessbauer experiments. A model for the structure of radiation damaged zones where the tetrahedral coordination of the atoms is prefered strongly and where the bond angles are distributed in a random manner around the ideal values is able to interprete the measured results satisfactorily.