The growth properties of SiGe films on Si(100) using Si2H6 gas and Ge solid source molecular beam epitaxy
- 1 February 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 147 (3-4) , 320-325
- https://doi.org/10.1016/0022-0248(94)00859-0
Abstract
No abstract availableKeywords
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