Analysis and modeling of the radiation response of multijunction space solar cells
- 11 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 46, 1092-1097
- https://doi.org/10.1109/pvsc.2000.916077
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Structural changes in InP/Si solar cells following irradiation with protons to very high fluencesJournal of Applied Physics, 1999
- Low energy proton-induced displacement damage in shielded GaAs solar cells in spaceApplied Physics Letters, 1997
- Electron and proton irradiation-induced degradation of epitaxial InP solar cellsSolid-State Electronics, 1996
- Atomic disorder and the transition temperature of cuprate superconductorsPhysical Review B, 1992
- Taguchi methods (Proc 1988 European Conference) Editor: Professor A. Bendell Elsevier Applied Science Publishers, London, 1989 ISBN 1-85166-333-9 pp 212 + xvComposites Manufacturing, 1990
- Displacement damage extremes in silicon depletion regionsIEEE Transactions on Nuclear Science, 1989
- Effect of particle-induced displacements on the critical temperature of YBa2Cu3O7−δApplied Physics Letters, 1989
- Displacement damage in GaAs structuresIEEE Transactions on Nuclear Science, 1988
- Correlation of Particle-Induced Displacement Damage in SiliconIEEE Transactions on Nuclear Science, 1987
- Energy Dependence of Proton-Induced Displacement Damage in SiliconIEEE Transactions on Nuclear Science, 1986