Diffusion of ion-implanted Sn and Sb in heavily doped n-type silicon
- 29 August 1988
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (9) , 755-757
- https://doi.org/10.1063/1.99823
Abstract
The diffusion of ion‐implanted Sn and Sb in silicon single crystals during rapid thermal annealing at 1000 and 1050 °C has been studied as a function of P donor concentration. For extrinsic/intrinsic carrier concentration ratios (n/ni )≥20, almost identical, extremely large diffusion coefficients are found for both impurities. The diffusion coefficients exhibit approximately an (n/ni )4 dependence. The onset of this dependence is accompanied by the appearance of a new defect‐complex type containing Sb or Sn, respectively.Keywords
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