Redistribution and activation of ion implanted As in Si during RTA for concentrations around solid solubility
- 1 January 1987
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 19-20, 507-511
- https://doi.org/10.1016/s0168-583x(87)80101-5
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Rapid thermal annealing of high concentration, arsenic implanted silicon single crystalsApplied Physics Letters, 1986
- Investigation of transient diffusion effects in rapid thermally processed ion implanted arsenic in siliconApplied Physics Letters, 1985
- A review of rapid thermal annealing (RTA) of B, BF 2 and As ions implanted into siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Modeling Rapid Thermal Diffusion of Arsenic and Boron in SiliconJournal of the Electrochemical Society, 1984
- Behaviour of implanted arsenic in silicon single crystals subjected to transient heating with incoherent lightApplied Physics A, 1984
- On models of phosphorus diffusion in siliconJournal of Applied Physics, 1983
- Rapid thermal annealing of arsenic and boron-implanted siliconApplied Physics Letters, 1983
- Fully automatic apparatus for the determination of doping profiles in Si by electrical measurements and anodic strippingReview of Scientific Instruments, 1983