Rapid thermal annealing of high concentration, arsenic implanted silicon single crystals
- 30 June 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (26) , 1805-1807
- https://doi.org/10.1063/1.96793
Abstract
Rapid thermal annealing of arsenic implanted 〈100〉 silicon single crystals has been studied by Rutherford backscattering/channeling spectrometry, and Hall effect/resistivity measurements, combined with layer removal. Redistribution of the implanted arsenic was followed as a function of anneal time (6–60 s including temperature rise time) and implanted peak concentration (3–10×1020 cm−3) at temperatures of 1050 and 1090 °C. The maximum concentration of electrically active arsenic was found to be 2–3×1020 cm−3 independent of anneal time and implanted peak concentration. Fast arsenic redistribution was observed to take place within the first 20 s of annealing. Complete arsenic activation occurred by means of rapid redistribution to the solubility limit.Keywords
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