Rapid Thermal Annealing in Si
- 1 January 1984
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
Certain aspects of Rapid Thermal Annealing (RTA) are reviewed. Temperature considerations are discussed. The implant disorder removal rate is measured (5eV removal energy for As induced damage). Shallower defect-free junctions are obtained using RTA. Results of a ”Round Robin”-RTA annealing are presented, transient enhanced diffusion is not prominent for As. New results for the concentration enhanced diffusion of As are presented. Diffusion from the channeling-tai1 region of shallow boron diffusions is noted as a limiting factor for producing shallow p+-junctions. Other issues are briefly discussed.Keywords
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