Reflection High-Energy Electron Diffraction Study of the Growth of Ge on the Ge(111) Surface
- 1 October 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (10R)
- https://doi.org/10.1143/jjap.31.3429
Abstract
Intensity oscillations, spot profiles and rocking curves of the (00) rod in reflection high-energy electron diffraction (RHEED) during the growth of Ge on the Ge(111) surface are investigated under various conditions. Two types of RHEED intensity oscillations with a period of one monolayer have been observed at specific conditions. One type of oscillation observed at a substrate temperature of 180°C is ascribed to the overlapping of the specular reflection and the 333 bulk reflection. The other type of monolayer oscillation observed at a low substrate temperature for a low glancing angle suggests the monolayer mode growth. Rocking curves of the (00) rod have been measured at various stages of growth, which demonstrate the periodic change of the intensity distribution of the rod during growth.Keywords
This publication has 25 references indexed in Scilit:
- Combined study of RHEED spot profiles and intensity oscillations during MBE growth of Ge on Ge(111)Surface Science, 1990
- Monolayer to bilayer transition in reflection high-energy electron diffraction intensity oscillations during Si(001) molecular beam epitaxyApplied Physics Letters, 1989
- Reflection High-Energy Electron Diffraction (RHEED) Oscillations at 77 KPhysical Review Letters, 1989
- RHEED intensity rocking curves from Si(111) surface during MBE growthJournal of Crystal Growth, 1989
- Surface X-Ray Scattering during Crystal Growth: Ge on Ge(111)Physical Review Letters, 1988
- Intensity oscillations for electron beams reflected during epitaxial growth of metalsPhysical Review B, 1987
- Observation of alternating reconstructions of silicon (001) 2×1 and 1×2 using reflection high-energy electron diffraction during molecular beam epitaxyApplied Physics Letters, 1986
- Origin of azimuthal effect of RHEED intensity oscillations observed during MBESurface Science, 1986
- Si(001)-2×1 Single-Domain Structure Obtained by High Temperature AnnealingJapanese Journal of Applied Physics, 1986
- Phase-Locked Epitaxy Using RHEED Intensity OscillationJapanese Journal of Applied Physics, 1984