Very low loss extended cavity GaAs/AlGaAs lasersmade by impurity-free vacancy diffusion
- 20 January 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (2) , 145-146
- https://doi.org/10.1049/el:19940073
Abstract
Very low loss extended cavity lasers have heen fabricated using the impurity-free vacancy diffusion technique. The average loss, obtained from the slope of measured loss as a function of the extended cavity length, was 10 dB/cm for extended cavities annealed at 900 °C for 30s. The lowest loss of 3.6 dB/cm was obtained from a device annealed at 950 °C for 30s.Keywords
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