Optimization of the InP/SiO2 interface treatment by (NH4)2Sx for the InP MISFET fabrication technology
- 1 May 1992
- journal article
- Published by Elsevier in Sensors and Actuators A: Physical
- Vol. 33 (1-2) , 33-38
- https://doi.org/10.1016/0924-4247(92)80221-n
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
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- SiO2 deposition by direct photolysis at 185 nm of N2O and SiH4Applied Surface Science, 1990
- The sulfurized InP surfaceJournal of Vacuum Science & Technology B, 1989
- Sulfur as a surface passivation for InPApplied Physics Letters, 1988
- Étude du diagramme des phases condensées du système In-P-SThin Solid Films, 1986