A study of the polarization phenomenon in lead silicate glass using the MGOS structure
- 11 February 1974
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 7 (3) , 443-450
- https://doi.org/10.1088/0022-3727/7/3/311
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Transport of sodium ions in silicon dioxide films using MOS structurePhysica Status Solidi (a), 1972
- Effect of temperature on M-O-S capacitances†International Journal of Electronics, 1972
- Stability and surface charge in the MOS system†International Journal of Electronics, 1968
- Fused Glass Penetration into Thermally Grown Silicon Dioxide FilmsJournal of the Electrochemical Society, 1967
- Space-Charge Polarization in Glass FilmsJournal of Applied Physics, 1966
- Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structuresSolid-State Electronics, 1965
- Effect of Temperature and Bias on Glass-Silicon InterfacesIBM Journal of Research and Development, 1964
- Space Charge and Electrode Polarization in Glass, IJournal of the American Ceramic Society, 1964
- Field Effect‐Capacitance Analysis of Surface States on SiliconPhysica Status Solidi (b), 1963
- Diffusion radioaktiven Bleies in BleimetasilikatglasZeitschrift für Physikalische Chemie, 1960