Film structures based on the ferroelectric-semiconductor Sn2P2S6

Publisher Website
Google Scholar
Abstract
Polycrystalline films of the ferroelectric-semiconductor Sn2P2S6 with the crystallite orientation of different types have been prepared by the method of thermal vacuum evaporation in quasiclosed volume. The films exhibit, upon volume excitation, high piezomodulus. Distinctive features of the temperature and frequency dependence of the capacitance of the structures metal-ferroelectric film-metal indicate that the capacitance of such structures is, in low-frequency measuring fields, determined by surface layers of the film. The structures metal-ferroelectric film-semiconductor have been studied by the method of C-V characteristics. The character of the hysteresis of C-V loops points to the presence of an intrinsic field effect which continues during ten minutes.