GaAs Surface Cleaning with HCl Gas and Hydrogen Mixture for Molecular-Beam-Epitaxial Growth
- 1 April 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (4A) , L702
- https://doi.org/10.1143/jjap.27.l702
Abstract
GaAs surface cleaning with a hydrogen chloride gas and hydrogen mixture prior to molecular-beam-epitaxial growth has been investigated as a means of reducing the carrier depletion at the substrate-epitaxial layer interface. Reactive gas etching was performed at a substrate temperature of 500°C. The amount of carrier depletion, measured by a capacitance-voltage carrier profiling technique, decreased significantly from 1.2×1012 cm-2 to less than 1×1010 cm-2.Keywords
This publication has 8 references indexed in Scilit:
- GaAs surface cleaning by thermal oxidation and sublimation in molecular-beam epitaxyJournal of Applied Physics, 1988
- Morphology of thermally etched GaAs substrate and molecular-beam epitaxial layers grown on its substrateJournal of Vacuum Science & Technology B, 1988
- Reduction of backgating effect in MBE-Grown GaAs/AlGaAs HEMT'sIEEE Electron Device Letters, 1987
- I n s i t u chemical etching of GaAs(001) and InP(001) substrates by gaseous HCl prior to molecular-beam epitaxy growthJournal of Vacuum Science & Technology B, 1987
- Cleaning of MBE GaAs Substrates by Hydrogen Radical Beam IrradiationJapanese Journal of Applied Physics, 1987
- In Situ Deoxidation of GaAs Substrates by HCl GasJapanese Journal of Applied Physics, 1987
- Effect of Thermal Etching on GaAs Substrate in Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1986
- Effect of substrate surface treatment in molecular beam epitaxy on the vertical electronic transport through the film-substrate interfaceApplied Physics Letters, 1981