Channeling of Shallow Si Implants Into GaAs as a Function of Tilt and Rotation Angles
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
The effects of tilt and rotation angle on implant channeling are explored for Si implants into (100)-oriented GaAs substrates using Monte Carlo simulations, SIMS profiling, capacitance profiling, and Hall measurements. It is shown that the 7° tilt angle often used to prevent axial channeling is not large enough, and 11–13° angles are required to obtain the sharpest and most reproducible implant profiles. Rotation angles have a much smaller effect on the profiles as long as the beam incidence is kept away from the < 110 > direction.Keywords
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