Subthreshold conduction in uniformly doped epitaxial GaAs MESFETs
- 1 July 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (7) , 1264-1273
- https://doi.org/10.1109/16.30931
Abstract
No abstract availableKeywords
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