Multiply scanned electron beam annealing of ion implanted indium phosphide
- 15 October 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (8) , 729-731
- https://doi.org/10.1063/1.93657
Abstract
A multiply scanned electron beam has been used to anneal ion implanted indium phosphide in the dose range of 5×1012 to 3.6×1014 Se+/cm2. The power density was varied from 8 to 165 W/cm2, and exposure times were in the range 0.5–4.5 s. The best electrical activity for the dose of 5×1012 Se+/cm2 was 9% with a sheet mobility of 1400 cm2/Vs, whereas for a dose of 3.6×1014 Se+/cm2 the electrical activity was 36% with a sheet mobility of 760 cm2/Vs.Keywords
This publication has 5 references indexed in Scilit:
- Pulsed laser annealing of selenium implanted InPJournal of Physics D: Applied Physics, 1981
- Rutherford back-scattering and ellipsometry of selenium implanted InPJournal of Physics D: Applied Physics, 1981
- Annealing of Si 3 N 4 -capped ion-implanted InPElectronics Letters, 1981
- Pulse electron annealing of ion-implanted InPApplied Physics Letters, 1979
- Implantation and PH 3 Ambient Annealing of InPJournal of the Electrochemical Society, 1978