Pulsed laser annealing of selenium implanted InP
- 14 December 1981
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 14 (12) , 2333-2339
- https://doi.org/10.1088/0022-3727/14/12/024
Abstract
Rutherford back-scattering, Hall effect and Nomarski interference microscopy have been used to study 200 keV selenium ions implanted into InP in the dose range 1*1014 to 1*1015 cm-2. Samples were irradiated with single pulses from a Q-switched ruby laser in the energy range 0.2 to 2.2 J cm-2. It was found that capless laser irradiation does not allow complex recrystallisation of damaged InP, and an energy density of 0.3 J cm-2 causes surface decomposition, thus producing indium-rich surface layers. To ensure that the measured electrical properties were due to the implanted atoms alone it was found necessary to thermally anneal samples at 4000DC for 5 min after the laser irradiation. The activity was 26% and the mobility of 300 cm2 V-1 s-1 for a dose of 1*1015 Se+ cm-2 irradiated at 0.5 J cm-2.Keywords
This publication has 5 references indexed in Scilit:
- Rutherford back-scattering and ellipsometry of selenium implanted InPJournal of Physics D: Applied Physics, 1981
- Annealing of Si 3 N 4 -capped ion-implanted InPElectronics Letters, 1981
- InP surface conducting films from electron-pulse annealingApplied Physics Letters, 1980
- Pulse electron annealing of ion-implanted InPApplied Physics Letters, 1979
- Laser annealing of capped and uncapped GaAsElectronics Letters, 1979