A detailed simulation study of the performance of -silicon carbide MOSFETs and a comparison with their silicon counterparts
Open Access
- 1 June 1997
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 12 (6) , 655-661
- https://doi.org/10.1088/0268-1242/12/6/003
Abstract
We have used a two-dimensional drift-diffusion simulator, augmented by including accurate low-field mobility curves obtained by the Monte Carlo method, to study the operation of SiC MOSFETs both at room and high temperatures. A comparison with Si MOSFETs at room temperature is performed. Although drain current was higher in Si MOSFETs, SiC MOSFETs showed lower saturation conductance values. The dependence of the saturation velocity on the transverse electric field has been introduced in our simulations and its inclusion shown to be important to reliably model SiC MOSFET current and small-signal parameters. High-temperature correct operation of SiC MOSFETs has also been studied.Keywords
This publication has 18 references indexed in Scilit:
- Electron velocity saturation in quantized silicon carbide inversion layersApplied Physics Letters, 1996
- Calculations of the temperature and field dependent electronic mobility in β-SiCSolid-State Electronics, 1995
- SiC devices: physics and numerical simulationIEEE Transactions on Electron Devices, 1994
- Self-consistent calculations in silicon carbide inversion layersJournal of Applied Physics, 1994
- Modeling of β-SiC MESFETs using hydrodynamic equationsSolid-State Electronics, 1993
- An ensemble Monte Carlo study of high-field transport in β-SiCPhysica B: Condensed Matter, 1993
- Recent developments in SiC single-crystal electronicsSemiconductor Science and Technology, 1992
- Characterization of device parameters in high-temperature metal-oxide-semiconductor field-effect transistors in β-SiC thin filmsJournal of Applied Physics, 1988
- Temperature dependence of the current-voltage characteristics of metal-semiconductor field-effect transistors in n-type β-SiC grown via chemical vapor depositionApplied Physics Letters, 1987
- High-field transport in wide-band-gap semiconductorsPhysical Review B, 1975