Sequential versus coherent tunneling through double barrier diodes investigated by calibrated measurement of charge accumulation
- 1 January 1990
- journal article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 8 (4) , 409-411
- https://doi.org/10.1016/0749-6036(90)90340-d
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Charge accumulation in a double-barrier resonant-tunneling structure studied by photoluminescence and photoluminescence-excitation spectroscopyPhysical Review Letters, 1990
- Differential absorption spectroscopy of charge distributions in double-barrier tunnel structuresPhysical Review B, 1990
- Inelastic scattering in resonant tunnelingPhysical Review B, 1989
- Determination of Charge Accumulation and Its Characteristic Time in Double-Barrier Resonant Tunneling Structures Using Steady-State PhotoluminescencePhysical Review Letters, 1988
- Absorption spectroscopy of the continuous transition from low to high electron density in a single modulation-doped InGaAs quantum wellPhysical Review Letters, 1987
- Theory of transient excitonic optical nonlinearities in semiconductor quantum-well structuresPhysical Review B, 1985
- Frequency limit of double-barrier resonant-tunneling oscillatorsApplied Physics Letters, 1985
- Effect of Inelastic Processes on Resonant Tunneling in One DimensionPhysical Review Letters, 1985
- Three-Cocycle in Mathematics and PhysicsPhysical Review Letters, 1985
- Physics of resonant tunneling. The one-dimensional double-barrier casePhysical Review B, 1984