Hole traps in nitrogen-doped ZnSe epitaxial layers
- 1 February 1996
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 159 (1-4) , 280-283
- https://doi.org/10.1016/0022-0248(95)00762-8
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- p-Type doping of ZnSe with a novel nitrogen exciterJournal of Crystal Growth, 1994
- Deep hole traps in p-type nitrogen-doped ZnSe grown by molecular beam epitaxyApplied Physics Letters, 1993
- Deep hole trap properties of p-type ZnSe grown by molecular beam epitaxyApplied Physics Letters, 1993
- Doping of nitrogen acceptors into ZnSe using a radical beam during MBE growthJournal of Crystal Growth, 1991
- Nitrogen related defect centers in zinc selenideJournal of Applied Physics, 1984