Rempelet al.Reply:
- 2 September 2003
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 91 (10) , 109602
- https://doi.org/10.1103/physrevlett.91.109602
Abstract
A Reply to the Comment by J. W. Steeds.This publication has 6 references indexed in Scilit:
- Comment on “Identification of Lattice Vacancies on the Two Sublattices of SiC”Physical Review Letters, 2003
- Ligand hyperfine interaction at the neutral silicon vacancy in 4H- andPhysical Review B, 2002
- Identification of Lattice Vacancies on the Two Sublattices of SiCPhysical Review Letters, 2002
- Differentiation between C and Si Related Damage Centres in 4H- and 6H-SiC by the Use of 90-300 kV Electron Irradiation Followed by Low Temperature Photoluminescence MicroscopyMaterials Science Forum, 2001
- Calculated Positron Annihilation Parameters for Defects in SiCMaterials Science Forum, 2001
- Silicon vacancy related defect in 4H and 6H SiCPhysical Review B, 2000