Line-Source E-Beam Crystallization of Silicon-on-Insulator Films
- 1 January 1983
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
Silicon-on-insulator films have been formed using a 20 mm by 1 mm line-source electron beam, with sample sweep speeds of 100–500 cm/sec and peak beam power densities up to 75 kW/cm2. Films were formed over 1 and 2 μm thick SiO2 isolating layers on 4°C diameter Si wafers, with stripe openings of 5 to 100 μ width for seeding the crystallization from the substrate. Films consisted of Si layers from 0.4 to 1.0 μm thickness, with a capping layer of 2 μm SiO2. By sweeping the beam parallel to the long axis of the seed openings, smooth, oriented films were obtained, with low-angle grain boundaries confined to midway between seed openings. Best results were obtained for ≲ 50 μm spacing between seed openings.Keywords
This publication has 3 references indexed in Scilit:
- Use of selective annealing for growing very large grain silicon on insulator filmsApplied Physics Letters, 1982
- Seeded oscillatory growth of Si over SiO2 by cw laser irradiationApplied Physics Letters, 1982
- Dislocation Etch for (100) Planes in SiliconJournal of the Electrochemical Society, 1972