Behavior of CMOS inverters at cryogenic temperatures
- 31 May 1985
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 28 (5) , 453-456
- https://doi.org/10.1016/0038-1101(85)90107-8
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Physical limits to VLSI technology using silicon MOSFET'sPhysica B+C, 1983
- Miniaturization of Si MOSFET's at 77 KIEEE Transactions on Electron Devices, 1982
- Subthreshold behavior of silicon MOSFETs at 4.2 KSolid-State Electronics, 1982
- Integrated circuits at cryogenic temperaturesCryogenics, 1978
- Very small MOSFET's for low-temperature operationIEEE Transactions on Electron Devices, 1977
- Semiconductor devices suitable for use in cryogenic environmentsCryogenics, 1974