Integrated circuits at cryogenic temperatures

This publication has 13 references indexed in Scilit:

• Thermal effects in JFET and MOSFET devices at cryogenic temperatures
  IEEE Transactions on Electron Devices, 1972
• A MOSFET oscillator suitable for measurements of small changes in capacitance or inductance at cryogenic temperatures
  Cryogenics, 1972
• Junction Field Effect Transistors at 4.2 K
  Review of Scientific Instruments, 1970
• Magnetic Susceptibility Measurements with a Tunnel Diode Oscillator
  Review of Scientific Instruments, 1970
• Temperature dependence of the saturation current of MOST's
  IEEE Transactions on Electron Devices, 1968
• MOST's at cryogenic temperatures
  Solid-State Electronics, 1968
• MOSFET Operation at 4.2 K
  Review of Scientific Instruments, 1968
• Operation of a Germanium FET at Low Temperatures
  Review of Scientific Instruments, 1968
• Field Effect Transistors at 4.2°K
  Review of Scientific Instruments, 1968
• Behaviour of silicon pn junctions at temperatures between 4-2 and 300 ° K†
  International Journal of Electronics, 1968