Bismuth-doped tin telluride
- 1 February 1987
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (3) , 1094-1098
- https://doi.org/10.1063/1.338204
Abstract
By optimizing the growth conditions and doping with Bi, we have produced epitaxial layers of SnTe with hole concentration as low as 2.6×1018 cm−3. This is more than an order of magnitude less than the smallest carrier concentration reported for undoped bulk crystals (even with heat treatment to reduce the metal vacancy concentration). The hole mobility is found to depend somewhat on the Bi content. Measurements of the refractive index of low carrier concentration SnTe show very little dispersion for wavelengths up to 30 μm.This publication has 16 references indexed in Scilit:
- Carrier density dependence of soft TO-phonon in SnTe by Raman scatteringSolid State Communications, 1977
- Soft-Phonon-Induced Raman Scattering in IV-VI CompoundsPhysical Review Letters, 1977
- Carrier-Concentration-Dependent Phase Transition in SnTePhysical Review Letters, 1976
- Raman observation of the ferroelectric phase transition in SnTePhysical Review B, 1974
- Paraelectric Behavior of PbTePhysical Review Letters, 1970
- Mössbauer Study of Properties and Phase Transitions of GexSn1−xTePhysica Status Solidi (b), 1970
- Energy-Band Structure and Electronic Properties of SnTePhysical Review B, 1969
- Optical and Electrical Properties and Band Structure of GeTe and SnTePhysical Review B, 1968
- Optical Properties of Tin Telluride in the Visible and Infrared RegionsJournal of the Optical Society of America, 1968
- Reflectivity of Tin Telluride in the InfraredPhysical Review B, 1967