Growth and high temperature performance of semi-insulating silicon carbide

This publication has 7 references indexed in Scilit:

• Features of SiC single-crystals grown in vacuum using the LETI method
  Materials Science and Engineering: B, 1999
• Deep level centers in silicon carbide: A review
  Semiconductors, 1999
• Deep Levels in SiC:V by High Temperature Transport Measurements
  Materials Science Forum, 1998
• High field/high temperature performance of semi-insulating silicon carbide
  Diamond and Related Materials, 1997
• Growth of SiC ingots with high ratea
  Materials Science and Engineering: B, 1997
• Magnetic circular dichroism and electron spin resonance of the A− acceptor state of vanadium, V3+, in 6H-SiC
  Materials Science and Engineering: B, 1995
• General principles of growing large-size single crystals of various silicon carbide polytypes
  Journal of Crystal Growth, 1981